Raman Spectroscopy of Dopant Impurities in Homogeneously and Planar (δ) Doped III-V Semiconductors
J. Wagner |
p1 |
|
Determination of Residual Donor Concentration by Selective Pair Luminescence in Semi-Insulating GaAs
T. Iino |
p11 |
|
Dynamics of Selectively Excited Donor Acceptor Pairs in GaAs
T.D. Harris, J.K. Trautman, J.I. Colonell |
p21 |
|
A New Technology of Boron Diffusion into Silicon by Rapid Thermal Processing
Wan Quan Shi, Qing Run Hou, Shi Xiang Liu, Xue Jun Liu, Zheng Qing Fu, Zhi Jing He, L.W. Lu |
p29 |
|
Control of Shallow Boron Profile in Silicon
Zhi Heng Lu, Su Jie Li, Yan Luo |
p35 |
|
Photoionization Cross-Section Spectra of Shallow Acceptors in Semiconductors: Effect of a Change in Heavy - to Light-Hole Mass Ratio
A.F. Polupanov, V.I. Galiev, V.E. Zhuravlev |
p41 |
|
Electron-Hole Mechanism of Migration and Defect Interaction
A.B. Gerasimov |
p47 |
|
Delta-Doping in III-V Semiconductors
E.F. Schubert, R.F. Kopf |
p53 |
|
Optical Interband Transitions in Single and Periodically Delta-Doped GaAs Samples
A.A. Bernussi, J.A. Brum, P. Motisuke, P. Basmaji, M. Siu Li, O. Hipólito |
p67 |
|
Photoluminescence and Excitation Study of Delta Doped GaAs
J.C.M. Henning, Y.A.R.R. Kessner, Paul M. Koenraad, M.R. Leys, A.P.J. Voncken, W.C. van der Vleuten, J.H. Wolter |
p73 |
