Preparation and Characterizations of High Quality InGaAs/GaAs Strained Multi-Quantum Wells Grown by MBE
J.M. Zhou, Hao Qing Hou, Y. Huang |
p1 |
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Influence of Growth Parameters on the Surface Morphology of MBE Grown GaAs and AlxGa1-xAs Layers
S.V. Ivanov, P.S. Kop'ev, N.N. Ledentsov |
p9 |
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Optical Switching of Double-Barrier Resonant Tunneling AlGaAs/GaAs Diode
S.V. Ivanov, P.S. Kop'ev, V.I. Korol'kov, N.N. Ledentsov, M.E. Lutsenko, B.Ya. Mel'tser, T.S. Tabarov, S.V. Shaposhnikov |
p13 |
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Sb Delta-Type Doping in Si-MBE Superlattices
Alexander I. Nikiforov, B.Z. Kanter, S.I. Stenin, S.V. Rubanov |
p17 |
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Molecular Beam Heteroepitaxy on Silicon Substrates
A. Zehe |
p21 |
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MBE Growth, Properties and Applications of Epitaxial Dielectric Fluoride Films on Semiconductors
N.S. Sokolov |
p29 |
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Evaporation and Incorporation of Gallium Atoms and Ions during Si MBE with a Sublimating Source
A. Kozhukhov |
p37 |
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Comparison of Growth Kinetics and Source Material Utilization Efficiency in MBE under Conventional and Ale Conditions
J. Aarik, J. Lembra, H. Siimon |
p41 |
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PED Mechanism Studied by Moleculardynamic Computer Simulation
B. Fritzsch, B. Wolf, A. Zehe |
p45 |
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Growth of Aluminum and Copper on Silicon by Molecular Beam Epitaxy
M. Büschel, T. Gantz, A. Thomas, A. Zehe |
p49 |
