MBE System for Research
M. Laznicka |
p53 |
|
Optical Simulation of the Effusion Molecular Beams in Epitaxy Technology
B. Adamczyk, L. Michalak, E. Radzka |
p57 |
|
The Liquid Metal Ion Source for Molecular Beam Epitaxy of Silicon
V. Avrutin, A.F. Vyatkin |
p61 |
|
Prior to Growth Examinations of the Quality of GaAs Substrates
M. Cukr, J. Kub, J. Pastrňák, J. Oswald, V. Mísková |
p65 |
|
The Advantages of Selectively Delta-Doped III-V Heterostructures for HEMT Applications
P.S. Kop'ev, A.A. Budza, S.V. Ivanov, N.N. Ledentsov, B.Ya. Mel'tser, M.Yu. Nadtochy, V.M. Ustinov |
p67 |
|
III-V Heterostructure Lasers with Short Period Superlattice Recombination Region
A.M. Vasil'ev, A.A. Dzamashvili, S.V. Ivanov, P.S. Kop'ev, N.N. Ledentsov, B.Ya. Mel'tser, V.M. Ustinov |
p75 |
|
AlGaAs/GaAs Heterojunction Photodiodes Grown by MBE
Ferenc Riesz, B. Szentpáli, I. Mojzes, A. Salokatve, H. Asonen, M. Pessa |
p81 |
|
An Extension of the Interfacial Layer Theory for Mixed Phase Metal-Semiconductor Contact
T.Q. Tuy, I. Mojzes, B. Szentpáli, I. Cseh |
p85 |
|
Electrophysical Parameters of the Metal-Semiconductor Interface in MBE and VPE Grown GaAs Schottky Contacts
Zsolt E. Horváth, B. Kovács, M. Németh-Sallay, Béla Pécz |
p99 |
|
The Dependence of Schottky Barrier Height of Metal-Semiconductor Contacts on the Ratio of Interfacial Area Occupied by Different Metal Components
T.Q. Tuy, I. Mojzes, B. Szentpáli |
p101 |
