EL2 and the Electronic Structure of the AsGa-ASj Pair in GaAs: The Role of Jahn-Teller Relaxation and Coulomb Interaction
G.A. Baraff, M. Schluter, Michel Lannoo |
p91 |
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The EL2 Defect and the Isolated Arsenic Antisite Defect in GaAs
Hans Jürgen von Bardeleben, J.C. Bourgoin, D. Stiévenard |
p97 |
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EL2 - Intracenter Absorption under Hydrostatic Pressure
M. Baj, P. Dreszer |
p101 |
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Infrared-Induced Paramagnetic Centres in GaAs and Properties of Metastable EL2
J. Bittebierre, R.T. Cox, R. Picard, E. Molva |
p107 |
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Anisotropy and Isotropy of Electric Field Effects for the EL2 and E3 Defects in GaAs
L. Dobaczewski |
p113 |
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Correlation Effects in Native Defects in GaAs
Marilia J. Caldas, A. Fazzio |
p119 |
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A Local Vibration Mode Absorption Study on the Metastability of EL2 Centres in GaAs
Wei Kun Ge, Desheng Jiang, Chunying Song, Jiefei Zheng |
p125 |
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Generation Process of EL2 Centers in GaAs
Masashi Suezawa, Koji Sumino, Fumio Orito |
p129 |
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Characterization of EL2 Level in As-Grown GaAs Prepared by MBE
V. Smid, P. Hubik, A. Bosacchi, S. Franchi, E. Gombia, L. Vanzetti |
p135 |
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Interstitial Defect Reactions in Silicon
Lionel C. Kimerling, M.T. Asom, J.L. Benton, P.J. Drevinsky, C.E. Caefer |
p141 |
