Formation and Optimization of Shallow Junctions by Ion Implantation and Rapid Thermal Annealing for CMOS Application
I Wei Wu
|
p159 |
Fabrication of Nanometer Doping Structures by Secondary Implantation
H. Jorke
|
p169 |
The Use of Ion Implantation for Lifetime Control in Silicon Devices
A. Mogro-Campero
|
p177 |
Silicon Surface and Interface Damage Studies Using Ion Implantation
S. Ashok
|
p187 |
Recoil Implantation for Shallow Junction Formation in Silicon
Harry L. Kwok
|
p195 |
Defects in SIMOX Structures
R.C. Barklie
|
p203 |
A Review of Deep Levels in Donor-Ion Implanted GaAs
D.W.E. Allsopp
|
p211 |
Ion Implantation in GaAs
S.J. Pearton
|
p247 |
Rapid Isothermal Annealing of Ion Implanted Gallium-Arsenide
Sukhdev Singh Gill
|
p281 |
Defects and Doping Effects in CdTe and CulnS2 by Phosphorus Ion Implantation and Pulsed Electron Beam Annealing
H.Y. Ueng, H.L. Hwang
|
p343 |