Self-Interstitial Atoms and Structure of Intrinsic Getter in Silicon Crystals
Liudmila I. Fedina, S.G. Denisenko, A.L. Aseev |
p79 |
|
Internal Gettering Effectiveness for Transition Metals /Fe,Ni/ in Cz-SI
U. Woijciechowski |
p85 |
|
Intrinsic Gettering of Radiation Defects in Silicon Caused by High-Temperature Oxygen-Containing Defects
V.B. Neimash, T.R. Sagan, V.M. Tsmots, V.M. Siratskii, V.I. Shakhovtsov, V.L. Shindich |
p87 |
|
Defect Engineering in Submicron CMOS Technologies
C. Claeys, Jan Vanhellemont, Eddy Simoen |
p95 |
|
Contamination Control in Si ULSI-Technology at the 1011cm-3 - Level and below
Werner Bergholz, G. Zoth, G. Götz, A. Saliov |
p109 |
|
Point Defect Engineering for ULSI Silicide Processing
George A. Rozgonyi, J.W. Honeycutt |
p121 |
|
Defect Control and Gettering in Cz-Silicon
F.G. Kirscht, Eicke R. Weber, I. Babanskaya |
p137 |
|
Silicon Device Engineering by Intrinsic Point Defect Control
N.A. Sobolev, Yu.V. Vyzhigin, B.N. Gresserov, E.I. Sheck, A.I. Kurbakov, E.E. Rubinova, V.A. Trunov |
p169 |
|
Defect Engineering in a High-Voltage Substrate Technology
G. Kissinger, W. Kissinger, K. Tittelbach-Helmrich, U. Retzlaff, J. Knopke, K. Schmalz, G. Morgenstern |
p175 |
|
Thermal Wafer Warpage and its Avoidance
A. Fischer, Hans Richter |
p181 |
