Tight Binding Calculations of Optical Cross Sections for Deep Level Defects in Semiconductors
J. Petit, G. Allan, Michel Lannoo |
p67 |
|
Accurate Prediction of Lattice Distortion for Complex Defects in Semiconductors: Extended Interstitials as Tests of Valence Force Potentials
Vitor J.B. Torres, Pierre M. Masri, A.M. Stoneham |
p73 |
|
Effects of Doping and Alloying on Native Defects and Complex Formation in Hg1-x CdxTe
C.G. Morgan-Pond |
p79 |
|
The Electronic States of a Substitutional Ytterbium Impurity in Indium Phosphide
L.A. Hemstreet |
p85 |
|
Defect Calculations in a Modified Haldane-Anderson Model
W. Beall Fowler |
p91 |
|
Electronic Structure of Neutral Complex Defects in Silicon
Bo Monemar, U. Lindefelt, W.M. Chen, Q.X. Zhao, H. Weman |
p97 |
|
High Temperature Investigations of Silicon by Means of Positron Annihilation
S. Dannefaer |
p103 |
|
Theoretical Determination of the Vacancy Migration Energy in Silicon
P.J. Kelly, Roberto Car, Sokrates T. Pantelides |
p115 |
|
Diffusion without Vacancies or Interstitials: A New Concerted Exchange Mechanism
K. Pandey |
p121 |
|
Germanium Impurity Diffusion in Boron Doped Silicon
A.L. Bouchetout, N. Tabet, Claude J.A. Monty |
p127 |
