Quality Aspects for the Production of SiC Bulk Crystals
Thomas L. Straubinger, Michael Rasp, Erwin Schmitt, Arnd Dietrich Weber |
p3 |
|
An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
Jung Doo Seo, Joon Ho An, Jung Gon Kim, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku |
p9 |
|
Growth and Characterization of 13C Enriched 4H-SiC for Fundamental Materials Studies
Yeon Suk Jang, Sakwe Aloysius Sakwe, Peter J. Wellmann, Sandrine Juillaguet, Hervé Peyre, Jean Camassel, John W. Steeds |
p13 |
|
Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals
Octavian Filip, Boris M. Epelbaum, Matthias Bickermann, Albrecht Winnacker |
p17 |
|
Growth Induced Stacking Fault Formation in 4H-SiC
D. Siche, M. Albrecht, H. J. Rost, Andreas Sendzik |
p21 |
|
Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method
Jung Gon Kim, Joon Ho An, Jung Doo Seo, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku |
p25 |
|
Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution
Jessica Eid, Jean Louis Santailler, Bernard Ferrand, Guy Rolland, Michel Burdin, R. Lewandowska, Jean Camassel |
p29 |
|
Growth and Electrical Characterization of 4H-SiC Epilayers
Tsunenobu Kimoto, Katsunori Danno, T. Hori, Hiroyuki Matsunami |
p35 |
|
Growth of SiC from a Liquid Phase at Low Temperature
Gabriel Ferro, Maher Soueidan, Olivier Kim-Hak, François Cauwet, Yves Monteil |
p41 |
|
Thick Epilayer for Power Devices
Anne Henry, Jawad Hassan, Henrik Pedersen, Franziska Christine Beyer, J. Peder Bergman, S. Andersson, Erik Janzén, Phillippe Godignon |
p47 |
