4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate
Jawad Hassan, Peder Bergman, Anne Henry, Henrik Pedersen, Patrick J. McNally, Erik Janzén |
p53 |
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A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process
James D. Oliver, Brian H. Ponczak |
p57 |
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Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling
Y. Shishkin, Rachael L. Myers-Ward, Stephen E. Saddow, Alexander Galyukov, A.N. Vorob'ev, D. Brovin, D. Bazarevskiy, R.A. Talalaev, Yuri N. Makarov |
p61 |
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Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
Maher Soueidan, Gabriel Ferro, Bilal Nsouli, Nada Habka, Veronique Soulière, Ghassan Younes, Khaled Zahraman, Jean Marie Bluet, Yves Monteil |
p65 |
|
Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates
Mike F. MacMillan, Mark J. Loboda, Jian Wei Wan, Gil Yong Chung, E.P. Carlson, Michael J. Spaulding, D. Deese |
p69 |
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CVD of 6H-SiC on Non-Basal Quasi Polar Faces
Y. Shishkin, Shailaja P. Rao, Olof Kordina, I. Agafonov, Andrei A. Maltsev, Jawad Hassan, Anne Henry, Catherine Moisson, Stephen E. Saddow |
p73 |
|
Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices
Joseph J. Sumakeris, Brett A. Hull, Michael J. O'Loughlin, Marek Skowronski, Vijay Balakrishna |
p77 |
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Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient
Masahiko Ito, Hidekazu Tsuchida, Isaho Kamata, L. Storasta |
p81 |
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Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth
Kazutoshi Kojima, Satoshi Kuroda, Hajime Okumura, Kazuo Arai |
p85 |
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Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition
René A. Stein, Bernd Thomas, Christian Hecht |
p89 |
