Title
Silicon Carbide and Related Materials 2006
| ISBN / ISBN-13: | 0-87849-442-1 / 978-0-87849-442-2 |
|---|---|
| Year: | 2007 |
| Title: | Silicon Carbide and Related Materials 2006 [online] |
| Subtitle: | ECSCRM 20006 |
| Authors/Editors: | N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall |
| Published in: | Materials Science Forum, Volumes 556 - 557 |
| Category: | Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006 |
| Pages: | 1100 |
| Edition: | hardcover |
| Description: | Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are wide-bandgap semiconductors which also possess extraordinary chemical, electrical and optical properties that make them uniquely attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to survive harsh operating conditions. This collection closely reflects the latest experimental and theoretical advances made in this field; divided into the sub-sections: SiC Bulk Growth, SiC Epitaxy, SiC Characterization and Theory, SiC Processing, SiC Devices and Nitrides and Related Materials. The impressive progress reported here will serve as a source of stimulating ideas for anyone working with these materials. |
| TOC: | Table of Contents |
| Prices: | USD: 478.00 / EUR: 346.00 |