Reduction of Dislocations in the Bulk Growth of SiC Crystals
Daisuke Nakamura |
p3 |
|
The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals
H. J. Rost, M. Schmidbauer, D. Siche |
p9 |
|
Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters
Roman Drachev, E. Deyneka, C. Rhodes, J. Schupp, Tangali S. Sudarshan |
p15 |
|
Halide-CVD Growth of Bulk SiC Crystals
A.Y. Polyakov, Mark A. Fanton, Marek Skowronski, Hun Jae Chung, Saurav Nigam, Sung Wook Huh |
p21 |
|
Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC
Saurav Nigam, Hun Jae Chung, Sung Wook Huh, J.R. Grim, A.Y. Polyakov, Mark A. Fanton, B.E. Weiland, David W. Snyder, Marek Skowronski |
p27 |
|
Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates
Jason R. Jenny, D.P. Malta, V.T. Tsvetkov, Mrinal K. Das, H. McD. Hobgood, Calvin H. Carter Jr. |
p31 |
|
Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds
Tomoaki Furusho, Ryota Kobayashi, Taro Nishiguchi, M. Sasaki, K. Hirai, Toshihiko Hayashi, Hiroyuki Kinoshita, Hiromu Shiomi |
p35 |
|
Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT)
C. Basceri, I. Khlebnikov, Y. Khlebnikov, P. Muzykov, M. Sharma, G. Stratiy, M. Silan, Cengiz M. Balkas |
p39 |
|
Growth and Characterization of Large Diameter 6H and 4H SiC Single Crystals
A. Gupta, E. Semenas, Ejiro Emorhokpor, J. Chen, Ilya Zwieback, Andrew E. Souzis, Thomas Anderson |
p43 |
|
Growth of SiC Boules with Low Boron Concentration
Mark A. Fanton, R.L. Cavalero, R.G Ray, B.E. Weiland, W.J. Everson, David W. Snyder, Rick D. Gamble, Ed Oslosky |
p47 |
