Resistivity Distribution in Undoped 6H-SiC Boules and Wafers
Qiang Li, A.Y. Polyakov, Marek Skowronski, Edward K. Sanchez, Mark J. Loboda, Mark A. Fanton, Timothy Bogart, Rick D. Gamble, N.B. Smirnov, Yuri N. Makarov |
p51 |
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The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source
Kwan Mo Kim, Soo Hyung Seo, Jae Woo Kim, Joon Suk Song, Myung Hwan Oh, Wook Bahng, Eun Dong Kim |
p55 |
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A Study of Nitrogen Incorporation in PVT Growth of n+ 4H SiC
Darren M. Hansen, Gil Yong Chung, Mark J. Loboda |
p59 |
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In Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray Imaging
Didier Chaussende, Peter J. Wellmann, M. Ucar, Michel Pons, Roland Madar |
p63 |
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Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals
Govindhan Dhanaraj, Yi Chen, Michael Dudley, Hui Zhang |
p67 |
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Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding
Guy Chichignoud, Laurent Auvray, Elisabeth Blanquet, Mikhail Anikin, Etienne Pernot, Jean Marie Bluet, Patrick Chaudouët, Michel Mermoux, Catherine Moisson, Fabrice Letertre, Michel Pons, Roland Madar |
p71 |
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Modeling and Experimental Verification of SiC M-PVT Bulk Crystal Growth
Peter J. Wellmann, Ralf Müller, Michel Pons |
p75 |
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Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC
Peter J. Wellmann, Desirée Queren, Ralf Müller, Sakwe Aloysius Sakwe, Ulrike Künecke |
p79 |
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High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design
Kap Ryeol Ku, Jung Kyu Kim, Jung Doo Seo, Ju Young Lee, Myung Ok Kyun, Won Jae Lee, Geun Hyoung Lee, Il Soo Kim, Byoung Chul Shin |
p83 |
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Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth
Krzysztof Grasza, Emil Tymicki, Jaroslaw Kisielewski |
p87 |
