The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk
Jian Min Hao, Li Jie Wang, Bin Fen, Xiang Quan Wang, Ying Hong, Da Lei Meng, Jun Min Guo, Ru Yue Yan |
p43 |
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Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis
Yasuo Kito, Emi Makino, Kenji Inaba, Norikazu Hosokawa, Hidehiko Hiramatsu, Jun Hasegawa, Shoichi Onda, Hideyuki Tsuboi, Hiromitsu Takaba, Akira Miyamoto |
p47 |
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Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane
Yuri N. Makarov, R.A. Talalaev, A.N. Vorob'ev, Mark S. Ramm, Maxim V. Bogdanov |
p51 |
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Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System
Mamoru Imade, Takashi Ogura, Masahiro Uemura, Fumio Kawamura, Masashi Yoshimura, Yasuo Kitaoka, Yusuke Mori, Takatomo Sasaki, Masanobu Yamazaki, Shigekazu Suwabe |
p55 |
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Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents
Ryo Tanaka, Kazuaki Seki, Satoshi Komiyama, Toru Ujihara, Yoshikazu Takeda |
p59 |
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Stability Growth Condition for 3C-SiC Crystals by Solution Technique
Toru Ujihara, Ryosuke Maekawa, Ryo Tanaka, Katsuhiro Sasaki, Kotaro Kuroda, Yoshikazu Takeda |
p63 |
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Structural Characterization of CF-PVT Grown Bulk 3C-SiC
Alkyoni Mantzari, Frédéric Mercier, Maher Soueidan, Didier Chaussende, Gabriel Ferro, Efstathios K. Polychroniadis |
p67 |
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Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy
Didier Chaussende, Frédéric Mercier, Roland Madar, Michel Pons |
p71 |
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SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
Albert A. Burk, Michael J. O'Loughlin, Joseph J. Sumakeris, C. Hallin, Elif Berkman, Vijay Balakrishna, Jonathan Young, Lara Garrett, Kenneth G. Irvine, Adrian R. Powell, Y. Khlebnikov, R.T. Leonard, C. Basceri, Brett A. Hull, Anant K. Agarwal |
p77 |
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Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling
Michel Pons, Shinichi Nishizawa, Peter J. Wellmann, Elisabeth Blanquet, Didier Chaussende, Jean Marc Dedulle, Roland Madar |
p83 |
