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Title

Silicon Carbide and Related Materials 2007

ISBN / ISBN-13: 0-87849-357-3 / 978-0-87849-357-9
Year: 2009
Title: Silicon Carbide and Related Materials 2007   [online]
Authors/Editors: Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Published in: Materials Science Forum, Volumes 600 - 603
Category: Selected, peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Convention Hall, Lake Biwa Resort, Otsu, Japan, October 14 – 19, 2007
Pages: 1434
Edition: softcover, 2-vol. set
Description: Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides have attracted increasing attention as promising target materials for high-power, high-frequency and high-temperature electronics use, as well as exploitation as short-wavelength light-emitters.
This two-volume set comprehensively documents the present understanding of various topics of scientific and technological interest: such as the growth of bulk crystals, the growth of epitaxial layers, extended and point defects, physical properties, theoretical modeling, surface- and nano-structures, the development of device processing, and the requirements demanded of electronic devices which can operate under extreme conditions and exhibit outstanding performance.
This comprehensive work thus offers a superlative overview for those already working in these fields, as well as offering a sound introduction to the subject for those planning to enter them.

TOC: Table of Contents
Prices: USD: 482.00 / EUR: 349.00

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(ISBN: 978-0-87849-357-9)
(ISBN: 978-3-908453-11-6)